, lf nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2N5038 high current npn silicon transistor description the 2N5038 is a silicon planar multiepitaxial npn transistors in jedec to-3 metal case. they are especially intended for high current and switching applications. internal schematic diagram absolute maximum ratings symbol vcbo vcex vcer vceo vebo ic icm ib plot tgtg parameter collector-base voltage (ie = 0) collector-emitter voltage (vbe=-1 .5v rbe^iooq) collector-emitter voltage (rbe < 502) collector-emitter voltage (ib = 0) emitter-base voltage (lc = 0) collector current collector peak current base current total dissipation at tc < 25 c storage temperature value 150 150 110 90 7 20 30 5 140 -65 to 200 unit v v v v v a a a w c nj semi-concluctors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
2N5038 thermal data rthj-case [thermal resistance junction-case max 1.25 c/w electrical characteristics (tease = 25 c unless otherwise specified) symbol icev iceo iebo vceo(sus)* vcer(sus)* vcex(sus)* vce(sat)* vbe(sat)* vbe* fife* hfe ccbo tr ts tf is/b** es/b parameter collector cut-off current (vbe = -1.5v) collector cut-off current (ib = 0) emitter cut-off current (lc = 0) collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter voltage dc current gain small signal current gain collector-base capacitance rise time storage time fall time second breakdown collector current second breakdown energy test conditions vce = 140 v vce=100v tc=150c vce = 70 v veb = 7 v veb = 5 v ic = 0.2 a ic = 0.2 a rbe = 50 i ic = 0.2 a rbe = 100 ii vbe =-1.5v |c=12a ib = 1.2 a ic = 20 a ib = 5 a ic = 20 a ib = 5 a lc=12a vce = 5v ic = 2 a vce = 5 v lc=12a vce = 5v ic = 2 a vce = 10 v f = 5 mhz ie = 0 vcb = 10 v f = 1-mhz lc=12a vcc = 30v lb1 =-lb2 = 1-2a vce = 28 v vce = 45 v vbe = -4 v rbe = 20 i l = 180(ih min. 90 110 150 50 20 12 5 0.9 13 typ. max. 50 10 20 50 5 1 2.5 3.3 1.8 250 100 300 0.5 1.5 0.5 unit ma ma ma ma ma v v v v v v v pf us us (is a a mj pulsed: pulse duration = 300 ps, duty cycle 1.5 % '' pulsed: 0.5 s non repetitive pulse.
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